SI4948BEY-T1-GE3
Увеличить
Краткое описание:
P-Channel JFET, 60V, 2.4A ID, 120mR Rds(on), SOIC
Дополнительная информация
P-Channel Silicon MOSFET, TrenchFET® series, featuring a 2-element design in an SOIC package. This surface-mount device offers a continuous drain current of 2.4A and a drain-source voltage rating of -60V. It boasts a low drain-source on-resistance (Rds On) of 120mR, with fast switching speeds including a 10ns turn-on delay and 35ns fall time. Operating across a wide temperature range from -55°C to 175°C, this component is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Nominal Vgs | -3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | -3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 120MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
