SI4953ADY-T1-E3
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Краткое описание:
P-Channel JFET, 30V, 3.7A, 53mR Rds On, SOIC
Дополнительная информация
P-Channel MOSFET, TrenchFET® series, featuring 30V drain-source breakdown voltage and 3.7A continuous drain current. Offers a low 53mΩ drain-source on-resistance and 1.1W power dissipation. Designed for surface mounting in an SOP-8 package, this RoHS compliant component operates from -55°C to 150°C with fast switching times including a 7ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Current | 37A |
| Voltage | 30V |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Nominal Vgs | -1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Threshold Voltage | -1V |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 53mR |
| Drain to Source Breakdown Voltage | 30V |
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