SI4966DY-T1-E3
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Краткое описание:
N-Channel MOSFET, 20V, 7.1A, 25mR Rds On, SO-8
Дополнительная информация
N-Channel MOSFET, 20V Vds, 7.1A Continuous Drain Current, and 25mΩ Max Drain-Source On-Resistance. This surface-mount device features a 2-element, N-channel silicon Metal-Oxide-Semiconductor FET construction. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 2W. The component is RoHS compliant and packaged in a lead-free SO-8 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | 600mV |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 40ns |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 20V |
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