SI5402BDC-T1-E3
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Краткое описание:
N-Channel MOSFET, 30V, 4.9A, 35mR Rds(on), SMD
Дополнительная информация
N-channel power MOSFET for surface mount applications. Features 30V drain-source voltage, 4.9A continuous drain current, and a maximum on-resistance of 35mΩ. Operates from -55°C to 150°C with a maximum power dissipation of 1.3W. Includes 10ns turn-on delay and 27ns turn-off delay. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.3W |
| Threshold Voltage | 20V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35mR |
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