SI5404BDC-T1-E3
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Краткое описание:
N-CH MOSFET 20V 5.4A 28mR SMD
Дополнительная информация
N-channel MOSFET, 20V drain-source voltage, 5.4A continuous drain current, and 28mΩ maximum drain-source on-resistance. Features a 1.5V threshold voltage, 12ns turn-on delay, and 12ns fall time. Packaged in a 1206-8 SMD/SMT case for surface mounting, with a maximum power dissipation of 1.3W and an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.3W |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 28mR |
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