SI5406CDC-T1-GE3
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Краткое описание:
N-CH MOSFET 12V 6A 20mR SMD
Дополнительная информация
N-CHANNEL MOSFET, 12V Vdss, 6A continuous drain current, and 20mΩ maximum drain-source on-resistance. Features 5.7W power dissipation and a 1V threshold voltage. Operates within a -55°C to 150°C temperature range. Surface mountable in an SMD/SMT package, this component offers fast switching with 10ns turn-on and 45ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.1nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 20mR |
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