SI5415AEDU-T1-GE3
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Краткое описание:
MOSFET -20V [email protected] -25A P-CH
Дополнительная информация
MOSFET -20V [email protected] -25A P-CH
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.3nF |
| Power Dissipation | 3.1W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Max Power Dissipation | 31W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 9.6mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 20V |
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