SI5418DU-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 12A 14.5mR 3.1W Surface Mount
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 12A continuous drain current. Features low 14.5mΩ drain-source on-resistance at 10V gate-source voltage, supporting up to 3.1W power dissipation. Surface mountable in a compact 3mm x 1.9mm x 0.75mm package. Operates across a wide temperature range of -55°C to 150°C and is RoHS compliant. Includes fast switching characteristics with 20ns turn-on and 20ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.9mm |
| Height | 0.75mm |
| Length | 3mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.35nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 14.5MR |
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