SI5432DC-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 6A 20mR SMD
Дополнительная информация
N-Channel MOSFET, 20V Vds, 6A Continuous Drain Current, 20mΩ Max Rds On. Features 1.2nF Input Capacitance, 12ns Fall Time, 15ns Turn-On Delay, and 35ns Turn-Off Delay. Encased in a 1206-8 SMD/SMT package, this component offers a Max Power Dissipation of 6.3W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 20MR |
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