SI5440DC-T1-GE3
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Краткое описание:
30V 6A N-CH MOSFET 19mR Rds On, 1.2nF Ciss, 10ns Fall
Дополнительная информация
N-channel MOSFET, 30V Vdss, 6A continuous drain current, and 19mΩ Rds On. Features include a 1.2nF input capacitance, 10ns fall time, and 20ns turn-on/off delay times. This surface-mount device operates from -55°C to 150°C with a maximum power dissipation of 6.3W. Packaged in a 1206-8 SMD/SMT case, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 19mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.2nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 6.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
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