SI5441BDC-T1-E3
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Краткое описание:
P-CH MOSFET 20V 4.4A 45mR SMD
Дополнительная информация
P-channel MOSFET, 20V Drain-Source Voltage (Vdss), 4.4A Continuous Drain Current (ID), and 45mΩ Max Drain-Source On Resistance (Rds On). Features a 12V Gate to Source Voltage (Vgs), 15ns Turn-On Delay Time, and 50ns Fall Time. Packaged in a 1206-8 SMD/SMT case, this component offers a 1.3W Max Power Dissipation and operates within a -55°C to 150°C temperature range. Surface mountable and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | P-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | SMD/SMT |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.3W |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | -20V |
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