SI5445BDC-T1-E3
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Краткое описание:
P-CH JFET 8V 5.2A 33mR SMD
Дополнительная информация
P-channel, surface-mount MOSFET designed for general-purpose small-signal applications. Features a continuous drain current of 5.2A and a drain-to-source breakdown voltage of -8V. Offers a low drain-source on-resistance of 33mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in a lead-free, 1206-8 SMD/SMT case, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| Package/Case | SMD/SMT |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.3W |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 33mR |
| Drain to Source Breakdown Voltage | -8V |
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