SI5457DC-T1-GE3

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SI5457DC-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 6A 36mR SMD
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET with 20V drain-source voltage and 6A continuous drain current. Features low 36mΩ maximum drain-source on-resistance and 150°C maximum operating temperature. Surface mountable in a ChipFET package, this component offers fast switching with 12ns fall time, 25ns turn-on delay, and 30ns turn-off delay. RoHS compliant and lead-free, it operates across a -55°C to 150°C temperature range.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.002998oz
Polarity P-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 36mR
Package/Case SMD/SMT
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1nF
Number of Channels 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Max Power Dissipation 5.7W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 46mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 36mR

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