SI5458DU-T1-GE3
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Краткое описание:
MOSFET N-CH 30V 6A PPAK CHIPFET
Дополнительная информация
MOSFET N-CH 30V 6A PPAK CHIPFET
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 41mR |
| Nominal Vgs | 3V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 325pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Max Power Dissipation | 10.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 51mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 41mR |
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