SI5461EDC-T1-E3
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Краткое описание:
P-CH JFET, 20V, 4.5A, 45mR RdsOn, SMD
Дополнительная информация
P-channel, surface-mount MOSFET designed for general-purpose small signal applications. Features a continuous drain current of 4.5A and a drain-to-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 45mR at a gate-source voltage of 12V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in an 8-pin chipFET SMD/SMT package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Polarity | P-CHANNEL |
| Fall Time | 4500ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | SMD/SMT |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.3W |
| Turn-On Delay Time | 2500ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27000ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | -20V |
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