SI5468DC-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 6A 28mR SMD
Дополнительная информация
N-channel MOSFET, 30V Vdss, 6A continuous drain current, and 28mΩ max drain-source on-resistance. Features a 1206-8 SMD/SMT package for surface mounting, with a max power dissipation of 5.7W. Operating temperature range from -55°C to 150°C, with fast switching speeds including 5ns turn-on delay and 10ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 435pF |
| Power Dissipation | 2.3W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 5.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28MR |
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