SI5475BDC-T1-E3
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Краткое описание:
P-Channel JFET, 12V, 7.7A ID, 28mR RdsOn, SMD
Дополнительная информация
P-channel Silicon JFET for surface mount applications. Features 12V drain-source breakdown voltage and 28mΩ maximum drain-source on-resistance. Continuous drain current capability of 7.7A with a maximum power dissipation of 6.3W. Operates across a temperature range of -55°C to 150°C. Includes 1.4nF input capacitance and fast switching times with 10ns turn-on delay. Packaged in a compact 1206-8 chip carrier, tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Current | 6A |
| Voltage | 12V |
| Polarity | P-CHANNEL |
| Fall Time | 72ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | SMD/SMT |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 2.5W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Max Power Dissipation | 6.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 28mR |
| Drain to Source Breakdown Voltage | 12V |
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