SI5504BDC-T1-E3
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Краткое описание:
N/P-Channel MOSFET 30V 4A 65mR SMD
Дополнительная информация
N-channel and P-channel MOSFET with 30V drain-source voltage and 4A continuous drain current. Features low on-resistance of 65mR (max) and 112mR (typical), with fast switching times including 4ns turn-on delay and 5ns fall time. This surface-mount device operates from -55°C to 150°C, offering a maximum power dissipation of 3.1W. Packaged in tape and reel, this RoHS compliant component is ideal for various electronic applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 220pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 112mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 140mR |
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