SI5504DC-T1-E3
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Краткое описание:
N/P-Channel JFET, 30V, 3.9A, 2-Channel, Surface Mount
Дополнительная информация
Dual N-channel and P-channel MOSFET for general-purpose small signal applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 3.9A. Offers a low drain-source on-resistance of 85mR maximum. Packaged in a 1206 surface-mount case with tape and reel packaging. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | 1206 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Threshold Voltage | 1V |
| Number of Elements | 2 |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 137mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 165MR |
| Drain to Source Breakdown Voltage | 30V |
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