SI5513CDC-T1-E3
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Краткое описание:
N/P-Channel JFET, 20V, 3.7A, 55mR Rds(on), SMD
Дополнительная информация
N-Channel and P-Channel Silicon FET, Surface Mount, 2-Element, 20V Drain to Source Voltage, 3.7A Continuous Drain Current. Features 55mR Max Drain to Source Resistance, 19ns Turn-On Delay Time, and 15ns Turn-Off Delay Time. Operates from -55°C to 150°C with 3.1W Max Power Dissipation. Packaged in Tape and Reel, 1206-8 SMD/SMT form factor. RoHS Compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 285pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 20V |
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