SI5513CDC-T1-GE3
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Краткое описание:
N/P-Ch JFET, 20V, 4A ID, 150mR Rds(on), SMD
Дополнительная информация
Surface mount N-channel and P-channel JFET with 20V drain-source voltage and 4A continuous drain current. Features low 55mΩ Rds(on) and 120mΩ drain-source resistance. Operates from -55°C to 150°C with 3.1W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Nominal Vgs | 600mV |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 285pF |
| Power Dissipation | 1.7W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 150mR |
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