SI5513DC-T1-E3
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Краткое описание:
N/P-Channel JFET, 20V, 4.2A, 155mR, 1206 SMD
Дополнительная информация
Dual-channel N-channel and P-channel small-signal MOSFET for general-purpose applications. Features a 20V drain-source breakdown voltage and a continuous drain current of 4.2A. Offers low on-resistance with a maximum of 75mR at a nominal gate-source voltage of 1.5V. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.1W. Packaged in a compact 1206 surface-mount case, this RoHS compliant component is ideal for space-constrained designs.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 75mR |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Package/Case | 1206 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Threshold Voltage | 1.5V |
| Number of Elements | 2 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 155mR |
| Drain to Source Breakdown Voltage | 20V |
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