SI5515DC-T1-E3
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Краткое описание:
2-Ch N/P-Channel JFET, 20V, 4.4A, 40mR RdsOn, SM
Дополнительная информация
Dual-channel N-channel and P-channel MOSFET for general-purpose small signal applications. Features a continuous drain current of 4.4A and a drain-source voltage of 20V. Offers a low drain-source on-resistance of 40mR. Operates within a temperature range of -55°C to 150°C. Packaged in a surface-mount 1206 case, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Nominal Vgs | 400mV |
| Package/Case | 1206 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Threshold Voltage | 400mV |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 69mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40mR |
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