SI5853DDC-T1-E3

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SI5853DDC-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 2.9A 85mR SMD
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET, 20V Drain-Source Voltage (Vdss), 2.9A Continuous Drain Current (ID). Features 85mR typical Drain to Source Resistance and 105mR maximum Rds On. Operates with 8V Gate to Source Voltage (Vgs), offering 15ns turn-on delay and 21ns turn-off delay. Surface mountable in a 1206-8 package, with a maximum power dissipation of 3.1W. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1.1mm
Length 3.05mm
Series LITTLE FOOT®
Weight 0.002998oz
Polarity P-CHANNEL
Fall Time 17ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 105mR
Package/Case SMD/SMT
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 320pF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 21ns
Max Power Dissipation 3.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 85mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.9A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 105mR

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