SI5855CDC-T1-E3

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SI5855CDC-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 2.5A 144mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET, 20V drain-source voltage, 2.5A continuous drain current, and 144mΩ maximum drain-source on-resistance. Features a 1.9W power dissipation, 1206-8 package, and surface mount capability. Ideal for applications requiring fast switching with 11ns turn-on delay and 22ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1.1mm
Length 3.05mm
Series LITTLE FOOT®
Weight 0.002998oz
Polarity P-CHANNEL
Fall Time 34ns
Packaging Tape and Reel
Rds On Max 144mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 276pF
Power Dissipation 1.9W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Max Power Dissipation 2.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 120mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 20V

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