SI5902BDC-T1-GE3
Производится
Увеличить
Краткое описание:
Dual N-Ch MOSFET, 30V, 4A, 65mR Rds(on), SMD
Дополнительная информация
Dual N-channel MOSFET transistor featuring 30V drain-source voltage and 4A continuous drain current. Surface mount device with 65mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.5V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 3.12W. This RoHS compliant component is supplied in a 1206 ChipFET package on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Nominal Vgs | 1.5V |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 220pF |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.12W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 65mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
