SI5902DC-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 2.9A ID, 85mR Rds On, SMD
Дополнительная информация
N-Channel Silicon Field-Effect Transistor (FET) for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 2.9A. Offers a low drain-source on-resistance of 85mR. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.1W. Includes two N-channel elements in a compact 1206-8 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1.1mm |
| Length | 3.1mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Threshold Voltage | 1V |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 85mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 85mR |
| Drain to Source Breakdown Voltage | 30V |
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