SI5903DC-T1-E3
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Краткое описание:
P-Channel JFET, 2.1A, -20V, 2-Ch, SMD
Дополнительная информация
P-channel MOSFET, designed for general-purpose small signal applications. Features a 2.1A continuous drain current and a -20V drain-to-source breakdown voltage. Offers a low drain-source on-resistance of 155mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.1W. Packaged in an 8-pin SMD/SMT small outline, tape and reel for surface mounting.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 155mR |
| Package/Case | SMD/SMT |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Threshold Voltage | -600mV |
| Number of Elements | 2 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 155mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 155mR |
| Drain to Source Breakdown Voltage | -20V |
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