SI5904DC-T1-E3
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Краткое описание:
2-Ch N-Ch JFET, 20V, 3.1A, 75mR RdsOn, SMD
Дополнительная информация
N-Channel JFET, 2-channel, small signal transistor designed for general-purpose applications. Features a continuous drain current of 3.1A and a drain-to-source breakdown voltage of 20V. Offers a low drain-to-source on-resistance of 75mR. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.1W. Packaged in an SMD/SMT format for surface mounting, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 75mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Threshold Voltage | 1.5V |
| Number of Elements | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 75mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 75mR |
| Drain to Source Breakdown Voltage | 20V |
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