SI5913DC-T1-E3

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SI5913DC-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 3.7A 84mR SMD
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET, 20V drain-source voltage, 3.7A continuous drain current, and 84mΩ drain-source resistance. Features a 1.65mm width, 3.05mm length, and 1.1mm height in an SMD/SMT package for surface mounting. Offers 18ns turn-on and turn-off delay times, 40ns fall time, and 330pF input capacitance. Maximum power dissipation is 3.1W, with operating temperatures from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1.1mm
Length 3.05mm
Series LITTLE FOOT®
Weight 0.002998oz
Polarity P-CHANNEL
Fall Time 40ns
Packaging Tape and Reel
Rds On Max 84mR
Package/Case SMD/SMT
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 330pF
Number of Channels 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 18ns
Max Power Dissipation 3.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 84mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.7A
Drain to Source Voltage (Vdss) 20V

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