SI5933CDC-T1-GE3

Производится
SI5933CDC-T1-GE3 - Vishay(Siliconix)
Увеличить
Краткое описание: 2P-CH MOSFET 20V 2.5A 144mR SMD
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-Channel MOSFET, 20V Vdss, 2.5A continuous drain current, and 144mR Rds On Max. Features a 1206-8 package for surface mounting, with 2 channels and a threshold voltage of -1V. Operates from -55°C to 150°C with a maximum power dissipation of 2.8W. Includes fast switching times with 1ns turn-on and 22ns turn-off delays.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.002998oz
Polarity P-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 144mR
Package/Case SMD/SMT
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 276pF
Threshold Voltage -1V
Number of Channels 2
Turn-On Delay Time 1ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Reach SVHC Compliant No
Max Power Dissipation 2.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 144mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 144mR

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.