SI5935CDC-T1-E3

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SI5935CDC-T1-E3 - Vishay(Siliconix)
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Краткое описание: 2P-CH MOSFET 20V 3.1A 100mR P-CH SMD
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET featuring 20V drain-source voltage and 4A continuous drain current. Surface mount device with 100mΩ drain-source resistance at Vgs=8V. Offers 10ns turn-on delay and 25ns turn-off delay, with a 32ns fall time. Encased in a 1206-8 package, this lead-free, RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1.1mm
Length 3.05mm
Series TrenchFET®
Weight 0.002998oz
Polarity P-CHANNEL
Fall Time 32ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 100mR
Package/Case SMD/SMT
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 455pF
Number of Channels 2
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Max Power Dissipation 3.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 100mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3.1A
Drain to Source Voltage (Vdss) 20V

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