SI5997DU-T1-GE3
Производится
Увеличить
Краткое описание:
P-CHANNEL TrenchFET MOSFET 2-Channel 30V -6A 54mR 10.4W Surface Mount
Дополнительная информация
The SI5997DU-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 10.4W and a continuous drain current of -6A. The device features a drain to source resistance of 54mR and a gate to source voltage of 20V. It is available in a surface mount package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 54mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 430pF |
| Threshold Voltage | -1.2V |
| Number of Channels | 2 |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 10.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 54mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -6A |
| Drain to Source Voltage (Vdss) | -30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
