SI6410DQ-T1-E3
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Краткое описание:
N-CH MOSFET 30V 7.8A 14mR TSSOP
Дополнительная информация
N-channel MOSFET with 30V drain-source breakdown voltage and 7.8A continuous drain current. Features low 14mΩ drain-source on-resistance and 1.5W maximum power dissipation. Operates from -55°C to 150°C, with fast switching times including 15ns turn-on and 10ns fall times. Packaged in a surface-mount TSSOP for tape and reel deployment. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.122inch |
| Height | 0.041inch |
| Length | 0.177inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Package/Case | TSSOP |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.5W |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 14mR |
| Drain to Source Breakdown Voltage | 30V |
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