SI6415DQ-T1-E3
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Краткое описание:
P-CH MOSFET, 30V, 6.5A, 19mR, TSSOP-8, Power
Дополнительная информация
P-channel power MOSFET with 30V drain-source breakdown voltage and 6.5A continuous drain current. Features low 19mΩ drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a compact TSSOP package, ideal for general-purpose power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| Polarity | P-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19mR |
| Package/Case | TSSOP |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 73ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 19mR |
| Drain to Source Breakdown Voltage | -30V |
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