SI6423DQ-T1-E3
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Краткое описание:
P-CH MOSFET 12V 8.2A 8.5mR TSSOP
Дополнительная информация
P-channel MOSFET, 12V drain-source voltage, 8.2A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features a 75ns fall time, 50ns turn-on delay, and 270ns turn-off delay. Packaged in a compact 1mm height, 3mm length, 4.4mm width TSSOP for surface mounting. Operates from -55°C to 150°C with 1.05W maximum power dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| Polarity | P-CHANNEL |
| Fall Time | 75ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.5mR |
| Nominal Vgs | -400mV |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 270ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.05W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 8.5mR |
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