SI6423DQ-T1-GE3
Производится
Увеличить
Краткое описание:
P-CH JFET, 12V, 8.2A, 8.5mR, TSSOP
Дополнительная информация
P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 8.2A and a drain-source voltage of -12V. Offers a low drain-source on-resistance of 8.5mR. Packaged in a surface-mount TSSOP-8, this component operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 1.05W. It is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| Polarity | P-CHANNEL |
| Fall Time | 75ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.5mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.05W |
| Threshold Voltage | -800mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 270ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.05W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 8.5MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
