SI6433BDQ-T1-GE3
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Краткое описание:
P-Channel Si MOSFET, 12V, 4A, 40mR, TSSOP-8
Дополнительная информация
P-channel, surface-mount MOSFET with a continuous drain current of 4A and a drain-to-source breakdown voltage of 12V. Features a low drain-source on-resistance of 40mΩ, a nominal gate-source voltage of -1.5V, and a threshold voltage of -1.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.05W. Packaged in a TSSOP-8 for tape and reel, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Nominal Vgs | -1.5V |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.05W |
| Threshold Voltage | -1.5V |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.05W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 40MR |
| Drain to Source Breakdown Voltage | 12V |
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