SI6544BDQ-T1-GE3
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Краткое описание:
N/P-Channel JFET, 30V, 3.8A, 32mR Rds(on), TSSOP
Дополнительная информация
Dual-channel N-channel and P-channel JFET for general-purpose small signal applications. Features a maximum drain-source voltage of 30V and a continuous drain current of 3.8A. Offers a low drain-source on-resistance of 32mR (max) and a gate-source voltage of 20V. Packaged in a surface-mount TSSOP with a maximum power dissipation of 830mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.177inch |
| Height | 0.041inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 43mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 32mR |
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