SI6926ADQ-T1-E3
Производится
Увеличить
Краткое описание:
2 N-CH MOSFET 20V 4.1A 30mR TSSOP
Дополнительная информация
Dual N-Channel MOSFET, 20V Drain-Source Voltage, 4.1A Continuous Drain Current, 30mΩ Max Drain-Source On Resistance. Features 6ns Turn-On Delay and 16ns Fall Time. Surface mountable in a TSSOP package, operating from -55°C to 150°C. 830mW Max Power Dissipation, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.005573oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Nominal Vgs | 400mV |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 830mW |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
