SI6926ADQ-T1-GE3
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Краткое описание:
2-Ch N-Ch JFET, 20V, 4.1A, 30mR RdsOn, TSSOP
Дополнительная информация
Dual N-channel small signal MOSFET, surface mountable in a TSSOP-8 package. Features 20V drain-source voltage, 4.1A continuous drain current, and 30mΩ maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 830mW. Includes fast switching characteristics with a 6ns turn-on delay and 16ns fall time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.005573oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 830mW |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30MR |
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