SI6933DQ-T1-E3
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Краткое описание:
N-Ch/P-Ch JFET, 3.5A ID, 30V Vdss, 45mR Rds(on), TSSOP
Дополнительная информация
Surface mount N-channel and P-channel silicon FET with 3.5A continuous drain current and 30V drain-source voltage. Features low 45mΩ drain-source on-resistance, 1W power dissipation, and operates from -55°C to 150°C. Packaged in TSSOP-8 with fast switching times, including 13ns turn-on and 10ns fall times. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | TSSOP |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1W |
| Number of Channels | 2 |
| Turn-On Delay Time | 13ns |
| Turn-Off Delay Time | 33ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | -30V |
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