SI6954ADQ-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 3.1A ID, 53mR RdsOn, TSSOP
Дополнительная информация
N-Channel Silicon FET, 30V Vdss, 3.1A Continuous Drain Current, 53mR Rds On. This 2-element JFET features a 1V threshold voltage and operates within a -55°C to 150°C temperature range. Packaged in a surface-mount TSSOP-8, it offers fast switching with 12ns turn-on and 23ns turn-off delay times. RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | 30V |
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