SI6968BEDQ-T1-E3
Производится
Увеличить
Краткое описание:
2 N-CH MOSFET 20V 5.2A 22mR TSSOP
Дополнительная информация
Dual N-channel MOSFET featuring 20V drain-source breakdown voltage and 5.2A continuous drain current. Surface mountable in an 8-TSSOP package, this component offers a maximum on-resistance of 22mΩ. Operating across a wide temperature range from -55°C to 150°C, it supports a gate-source voltage of 12V and has a power dissipation of 1W. RoHS compliant and lead-free, it is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 510ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Nominal Vgs | 600mV |
| Package/Case | TSSOP |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1W |
| Threshold Voltage | 600mV |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 245ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 860ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 22mR |
| Drain to Source Breakdown Voltage | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
