SI6968BEDQ-T1-GE3
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Краткое описание:
2-Ch N-Ch JFET, 20V, 5.2A, 22mR RdsOn, TSSOP
Дополнительная информация
Dual N-channel MOSFET, surface mount, in a TSSOP package. Features 20V drain-source voltage, 5.2A continuous drain current, and 22mΩ drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1W. Includes 245ns turn-on delay and 330ns fall time. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 330ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 245ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 860ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 22MR |
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