SI6969DQ-T1-E3

Снят с производства
SI6969DQ-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 12V 4.6A 34mR 2-CH TSSOP
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET, 12V drain-source voltage, 4.6A continuous drain current, and 34mΩ drain-source resistance. Features a 2-channel configuration within a compact 8-TSSOP package, suitable for surface mounting. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1.1W. Includes fast switching characteristics with turn-on delay of 25ns and fall time of 35ns.
RoHS Compliant
Mount Surface Mount
Width 4.4mm
Height 1mm
Length 3mm
Series TrenchFET®
Weight 0.005573oz
Polarity P-CHANNEL
Fall Time 35ns
Packaging Tape and Reel
Rds On Max 34mR
Package/Case TSSOP
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 1.1W
Number of Channels 2
Turn-On Delay Time 25ns
Turn-Off Delay Time 80ns
Max Power Dissipation 1.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 34mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.6A
Drain to Source Voltage (Vdss) 12V

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