SI7101DN-T1-GE3
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Краткое описание:
P-Channel MOSFET, -30V, -35A, 7.2mR, Surface Mount
Дополнительная информация
P-Channel Power MOSFET featuring a continuous drain current of -35A and a drain-to-source breakdown voltage of -30V. Offers a low on-resistance of 7.2mR at a gate-to-source voltage of 25V. This single-element silicon Metal-oxide Semiconductor FET boasts a maximum power dissipation of 52W and operates within a temperature range of -55°C to 150°C. Surface mountable with a height of 1.12mm, it is supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.12mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.595nF |
| Power Dissipation | 52W |
| Threshold Voltage | -1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.2mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | -35A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain to Source Breakdown Voltage | -30V |
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