SI7106DN-T1-E3
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Краткое описание:
20V 12.5A N-CH MOSFET 6.2mR Rds On, Surface Mount
Дополнительная информация
N-channel MOSFET with 20V drain-source voltage and 12.5A continuous drain current. Features 6.2mΩ maximum drain-source on-resistance and 1.5V threshold voltage. Operates from -55°C to 150°C with 1.5W maximum power dissipation. Surface mount design in a 1212-8 package, supplied on tape and reel. Includes 15ns fall time, 25ns turn-on delay, and 50ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 1.04mm |
| Length | 3.3mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.5W |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.2mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 6.2mR |
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