SI7106DN-T1-GE3
Производится
Увеличить
Краткое описание:
MOSFET N-CH 20V 12.5A 6.2mR SMD
Дополнительная информация
N-channel MOSFET with 20V Vdss and 12.5A continuous drain current. Features low 6.2mΩ drain-source on-resistance and 1.5W max power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a compact 3.3mm x 3.3mm x 1.04mm package, supplied on tape and reel. Includes fast switching times with turn-on delay of 25ns and fall time of 15ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 1.04mm |
| Length | 3.3mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.2mR |
| Termination | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.2mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 6.2mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
