SI7113DN-T1-E3

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SI7113DN-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 100V 3.5A 134mR SMT PowerPAK
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET for surface mount applications. Features 100V drain-source voltage and 3.5A continuous drain current. Offers a maximum drain-source on-resistance of 134mΩ. Operates within a temperature range of -50°C to 150°C with a maximum power dissipation of 52W. Includes a 30ns turn-on delay and 40ns fall time. Packaged in an 8-pin PowerPAK 1212 for tape and reel distribution.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 40ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 134mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.48nF
Number of Channels 1
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 51ns
Max Power Dissipation 52W
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Drain to Source Resistance 134mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.5A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 134MR

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